报告摘要：

随着器件朝着小型化、柔性化、低功耗、高度集成化等方向的发展，传统硅基器件的固有缺陷，如：接近摩尔定律极限的硅基半导体制作技术、硅基材料的光吸收系数小以及吸收光谱窄等问题，使其很难满足未来光电子探测器领域的需求。因此，探索新材料和新原理器件成为解决半导体产业未来发展瓶颈的必由之路，也是后摩尔时代纳米光电子器件的前沿科学问题。二维材料具有柔韧性好、光吸收效率高、光响应范围广、可与金属氧化物半导体（CMOS）工艺实现无限兼容等特性，很好的弥补了晶体硅材料的缺陷，在纳米光电子器件应用中表现出了良好的发展潜力。在此报告中，报告人将从新型二维光电子晶体的创新出发，重点介绍最近几年在新型光电子晶体研制的一些进展。

关键词：二维光电子材料；负电容场效应晶体管；太赫兹探测器件

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